IPB04N03LA |
RFQ for IPB04N03LA Required Field |
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| Technical/Catalog Information | IPB04N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 3877pF @ 15V |
| Power - Max | 107W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 32nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPB04N03LA IPB04N03LA IPB04N03LAINTR ND IPB04N03LAINTRND IPB04N03LAINTR |
| Product | Manufacturers | Pack | D/C |
| IPB04N03LA | - | TO-263 | 08+ |
Features |
| • Ideal for high-frequency dc/dc converters• N-channel• Logic level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• Superior thermal resistance• 175 °C operating temperature• dv /dt rated |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C | 80 | A |
| TC=100 °C | 80 | A | ||
| Pulsed drain current | ID,pulse | TC=25 °C | 385 | A |
| Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 290 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 107 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Models | MFG | Pack |
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| IPB04N03LA | TO-263 | |
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